A D-band CMOS transmitter with if-envelope feed-forward pre-distortion and injection-locked frequency-tripling synthesizer

Adrian Tang; David Murphy; Frank Hsiao; Gabriel Virbila; Yen Hsiang Wang; Hao Wu; Yanghyo Kim; Mau Chung Frank Chang

doi:10.1109/TMTT.2012.2222916

A D-band CMOS transmitter with if-envelope feed-forward pre-distortion and injection-locked frequency-tripling synthesizer

Adrian Tang
, David Murphy
, Frank Hsiao
, Gabriel Virbila
, Yen Hsiang Wang
, Hao Wu
, Yanghyo Kim
, Mau Chung Frank Chang

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A D-band CMOS transmitter is presented with an integrated injection-locked frequency-tripling synthesizer, digital control, and an on-chip antenna. It employs an IF feed-forward pre-distortion scheme, which improves gain compression of the transmitter to provide an overall higher linearity gain profile, allowing reduced power back-off for higher peak-to-average modulation schemes. The integrated D-band transmitter consumes 347 mW and occupies 1800 ×, 1500 μm of silicon area. The proposed transmitter delivers 0.4 dBm of effective isotropic radiated power with a saturated power on-chip of at least 12.2 dBm. The transmitter has a peak power-added efficiency (PAE) of 4.8% with power delivered to the antenna and a peak PAE of 0.31% when considering radiated power.

Original language	English
Article number	6355963
Pages (from-to)	4129-4137
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	60
Issue number	12
DOIs	https://doi.org/10.1109/TMTT.2012.2222916
State	Published - 2012

Keywords

D-band transmitter
digital-controlled millimeter wave
feed-forward linearization
on-chip antenna

Access to Document

10.1109/TMTT.2012.2222916

Cite this

@article{9276d6d86e1f486ca09c8eed8da20bb0,

title = "A D-band CMOS transmitter with if-envelope feed-forward pre-distortion and injection-locked frequency-tripling synthesizer",

abstract = "A D-band CMOS transmitter is presented with an integrated injection-locked frequency-tripling synthesizer, digital control, and an on-chip antenna. It employs an IF feed-forward pre-distortion scheme, which improves gain compression of the transmitter to provide an overall higher linearity gain profile, allowing reduced power back-off for higher peak-to-average modulation schemes. The integrated D-band transmitter consumes 347 mW and occupies 1800 ×, 1500 μm of silicon area. The proposed transmitter delivers 0.4 dBm of effective isotropic radiated power with a saturated power on-chip of at least 12.2 dBm. The transmitter has a peak power-added efficiency (PAE) of 4.8\% with power delivered to the antenna and a peak PAE of 0.31\% when considering radiated power.",

keywords = "D-band transmitter, digital-controlled millimeter wave, feed-forward linearization, on-chip antenna",

author = "Adrian Tang and David Murphy and Frank Hsiao and Gabriel Virbila and Wang, \{Yen Hsiang\} and Hao Wu and Yanghyo Kim and Chang, \{Mau Chung Frank\}",

year = "2012",

doi = "10.1109/TMTT.2012.2222916",

language = "English",

volume = "60",

pages = "4129--4137",

number = "12",

}

TY - JOUR

T1 - A D-band CMOS transmitter with if-envelope feed-forward pre-distortion and injection-locked frequency-tripling synthesizer

AU - Tang, Adrian

AU - Murphy, David

AU - Hsiao, Frank

AU - Virbila, Gabriel

AU - Wang, Yen Hsiang

AU - Wu, Hao

AU - Kim, Yanghyo

AU - Chang, Mau Chung Frank

PY - 2012

Y1 - 2012

N2 - A D-band CMOS transmitter is presented with an integrated injection-locked frequency-tripling synthesizer, digital control, and an on-chip antenna. It employs an IF feed-forward pre-distortion scheme, which improves gain compression of the transmitter to provide an overall higher linearity gain profile, allowing reduced power back-off for higher peak-to-average modulation schemes. The integrated D-band transmitter consumes 347 mW and occupies 1800 ×, 1500 μm of silicon area. The proposed transmitter delivers 0.4 dBm of effective isotropic radiated power with a saturated power on-chip of at least 12.2 dBm. The transmitter has a peak power-added efficiency (PAE) of 4.8% with power delivered to the antenna and a peak PAE of 0.31% when considering radiated power.

AB - A D-band CMOS transmitter is presented with an integrated injection-locked frequency-tripling synthesizer, digital control, and an on-chip antenna. It employs an IF feed-forward pre-distortion scheme, which improves gain compression of the transmitter to provide an overall higher linearity gain profile, allowing reduced power back-off for higher peak-to-average modulation schemes. The integrated D-band transmitter consumes 347 mW and occupies 1800 ×, 1500 μm of silicon area. The proposed transmitter delivers 0.4 dBm of effective isotropic radiated power with a saturated power on-chip of at least 12.2 dBm. The transmitter has a peak power-added efficiency (PAE) of 4.8% with power delivered to the antenna and a peak PAE of 0.31% when considering radiated power.

KW - D-band transmitter

KW - digital-controlled millimeter wave

KW - feed-forward linearization

KW - on-chip antenna

UR - https://www.scopus.com/pages/publications/84871781031

UR - https://www.scopus.com/pages/publications/84871781031#tab=citedBy

U2 - 10.1109/TMTT.2012.2222916

DO - 10.1109/TMTT.2012.2222916

M3 - Article

AN - SCOPUS:84871781031

SN - 0018-9480

VL - 60

SP - 4129

EP - 4137

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 12

M1 - 6355963

ER -

A D-band CMOS transmitter with if-envelope feed-forward pre-distortion and injection-locked frequency-tripling synthesizer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this