A nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation

Choonsup Lee, E. H. Yang, N. V. Myung, T. George

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

We have developed a new nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation. With this technique, it is possible to control the width, length, and depth of the nanochannels without the need for nanolithography. The use of sacrificial SiO2 layers allows the fabrication of centimeter-long nanochannels. In addition, the fabrication process is CMOS compatible. We have successfully fabricated an array of extremely long and narrow nanochannels (i.e. 10 mm long, 25 nm wide and 100 nm deep) with smooth inner surfaces.

Original languageEnglish
Title of host publication2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings
Pages553-556
Number of pages4
ISBN (Electronic)0780379764
DOIs
StatePublished - 2003
Event2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States
Duration: 12 Aug 200314 Aug 2003

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003
Country/TerritoryUnited States
CitySan Francisco
Period12/08/0314/08/03

Keywords

  • Amorphous silicon
  • CMOS process
  • Chemical technology
  • Etching
  • Lithography
  • Machining
  • Optical device fabrication
  • Oxidation
  • Semiconductor films
  • Thickness control

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