Additives participation in cu6sn5 phase formed between sn-3.5ag solder and cu by first-principle approach

Feng Gao, Jianmin Qu, Tadashi Takemoto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The Cu6Sn5 intermetallic compound is generated at the interface between OSP substrate and Sn-3.5Ag based solder containing small amount of Co or Ni additives. A small fraction of Co or Ni additive is probed in Cu6Sn5-based crystal structure, which occupies the crystal space sites of Cu atoms. The first-principle approach within the density functional theory is employed herein to explore the favorite sites of Ni and Co atoms in Cu6Sn5-based intermetallic compound. In the additive concentration regime of 0.0-18.2 at.%, the Ni atoms occupancy leads to a more thermodynamically stable (Cu, Ni)6Sn5 phase, while the Co atom occupancy results in a less stable phase, regardless of the occupancy sites. The density of states (DOS) analysis indicates that the Co occupancy in (Cu, Co)6Sn5 also leads to a less stable electronic structure. Basically, the Ni occupancy in (Cu, Ni)6Sn5 phase enhances the electronic structure stabilization. At the low Ni concentration level (9.1 at.% in Cu5Ni1Sn5 phase), the Ni atoms prefers to occupy 4a Cu atom site; while the Ni atoms will be located at 8f2 Cu atom site at the high concentration level (18.2 at.% in Cu4Ni2Sn5 phase).

Original languageEnglish
Title of host publication2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009
Pages1014-1020
Number of pages7
DOIs
StatePublished - 2009
Event2009 59th Electronic Components and Technology Conference, ECTC 2009 - San Diego, CA, United States
Duration: 26 May 200929 May 2009

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Conference

Conference2009 59th Electronic Components and Technology Conference, ECTC 2009
Country/TerritoryUnited States
CitySan Diego, CA
Period26/05/0929/05/09

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