TY - GEN
T1 - An 8.4Gb/s 2.5pJ/b mobile memory I/O interface using simultaneous bidirectional Dual (base+RF) band signaling
AU - Byun, Gyung Su
AU - Kim, Yanghyo
AU - Kim, Jongsun
AU - Tam, Sai Wang
AU - Hsieh, H. H.
AU - Wu, P. Y.
AU - Jou, C.
AU - Cong, Jason
AU - Reinman, Glenn
AU - Chang, Mau Chung Frank
PY - 2011
Y1 - 2011
N2 - Power and bandwidth requirements have become more stringent for DRAMs in recent years. This is largely because mobile devices (such as smart phones) are more intensively relying on the use of graphics. Current DDR memory I/Os operate at 5Gb/s with a power efficiency of 17.4mW/Gb/s (i.e., 17.4pJ/b)[1], and graphic DRAM I/Os operate at 7Gb/s/pin [3] with a power efficiency worse than that of DDR. High-speed serial links [5], with a better power efficiency of ∼1mW/Gb/s, would be favored for mobile memory I/O interface. However, serial links typically require long initialization time (∼1000 clock cycles), and do not meet mobile DRAM I/O requirements for fast switching between active, standby, self-refresh and power-down operation modes [4]. Also, traditional baseband-only (or BB-only) signaling tends to consume power super-linearly [4] for extended bandwidth due to the need of power hungry pre-emphasis, and equalization circuits.
AB - Power and bandwidth requirements have become more stringent for DRAMs in recent years. This is largely because mobile devices (such as smart phones) are more intensively relying on the use of graphics. Current DDR memory I/Os operate at 5Gb/s with a power efficiency of 17.4mW/Gb/s (i.e., 17.4pJ/b)[1], and graphic DRAM I/Os operate at 7Gb/s/pin [3] with a power efficiency worse than that of DDR. High-speed serial links [5], with a better power efficiency of ∼1mW/Gb/s, would be favored for mobile memory I/O interface. However, serial links typically require long initialization time (∼1000 clock cycles), and do not meet mobile DRAM I/O requirements for fast switching between active, standby, self-refresh and power-down operation modes [4]. Also, traditional baseband-only (or BB-only) signaling tends to consume power super-linearly [4] for extended bandwidth due to the need of power hungry pre-emphasis, and equalization circuits.
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U2 - 10.1109/ISSCC.2011.5746409
DO - 10.1109/ISSCC.2011.5746409
M3 - Conference contribution
AN - SCOPUS:79955727295
SN - 9781612843001
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 488
EP - 489
BT - 2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011
T2 - 2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
Y2 - 20 February 2011 through 24 February 2011
ER -