An 8Gb/s/pin 4pJ/b/pin Single-T-Line dual (base+RF) band simultaneous bidirectional mobile memory I/O interface with inter-channel interference suppression

Yanghyo Kim, Gyung Su Byun, Adrian Tang, Chewn Pu Jou, Hsieh Hung Hsieh, Glenn Reinman, Jason Cong, Mau Chung Frank Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

The demand for higher power efficiency and bandwidth is increasing as mobile devices keep enhancing its graphic computing and media processing capabilities. Current memory interfaces with single-wire signaling operate at 5Gb/s/pin [1] and 6Gb/s/pin [2] with the power efficiency of 17.4pJ/b/pin and 15.8pJ/b/pin, respectively. Mobile DDR memory I/O with differential signaling has better power efficiency of 6.4pJ/b/pin [3], and so does the prior dual-band interconnect (DBI) [4] with the efficiency of 5pJ/b/pin at 4.2Gb/s/pin for simultaneous bidirectional (SBD) mobile memory I/O interface. However, DBI's differential signaling is incompatible with existing standards, and it also occupies large die area for using differential transmission lines and an LC-oscillator for generating RF-carrier. To alleviate these concerns, we propose to use a Single-Transmission-Line DBI (STL-DBI) with the best figure-of-merit (FoM) defined as data rate per pin divided by the I/O-interface die area and power consumption.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages50-51
Number of pages2
DOIs
StatePublished - 2012
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 19 Feb 201223 Feb 2012

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Conference

Conference59th International Solid-State Circuits Conference, ISSCC 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period19/02/1223/02/12

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