TY - JOUR
T1 - An energy-efficient and high-speed mobile memory I/O interface using simultaneous Bi-directional dual (base+RF)-band signaling
AU - Byun, Gyung Su
AU - Kim, Yanghyo
AU - Kim, Jongsun
AU - Tam, Sai Wang
AU - Chang, Mau Chung Frank
PY - 2012/1
Y1 - 2012/1
N2 - A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed amplitude shift keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. Designed and fabricated in 65-nm CMOS technology, each RF-band and baseband transceiver consumes 10.5 mW and 11 mW and occupies 0.08 mm 2 and 0.06 mm 2 die area, respectively. The dual-band transceiver achieves error-free operation (BER < 10 -15 ) with 2 23-1 PRBS at 8.4 Gb/s over a distance of 10 cm.
AB - A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed amplitude shift keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. Designed and fabricated in 65-nm CMOS technology, each RF-band and baseband transceiver consumes 10.5 mW and 11 mW and occupies 0.08 mm 2 and 0.06 mm 2 die area, respectively. The dual-band transceiver achieves error-free operation (BER < 10 -15 ) with 2 23-1 PRBS at 8.4 Gb/s over a distance of 10 cm.
KW - Amplitude-shift-keying (ASK)
KW - dual-band signaling
KW - impedance
KW - mobile memory interface
KW - multi-band RF-Interconnect (RF-I)
KW - simultaneous bidirectionaltransformation
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U2 - 10.1109/JSSC.2011.2164709
DO - 10.1109/JSSC.2011.2164709
M3 - Article
AN - SCOPUS:84655163247
SN - 0018-9200
VL - 47
SP - 117
EP - 130
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 1
M1 - 6025221
ER -