Abstract
Development of a reliable doping method for 2D materials is a key issue to adopt the materials in the future microelectronic circuits and to replace the silicon, keeping the Moore's law toward the sub-10 nm channel length. Especially hole doping is highly required, because most of the transition metal dichalcogenides (TMDC) among the 2D materials are electron-doped by sulfur vacancies in their atomic structures. Here, hole doping of a TMDC, tungsten disulfide (WS2) using the silicon substrate as the dopant medium is demonstrated. An ultralow-power current sourcing transistor or a gated WS2 pn diode is fabricated based on a charge plasma pn heterojunction formed between the WS2 thin-film and heavily doped bulk silicon. An ultralow switchable output current down to 0.01 nA µm−1, an off-state current of ≈1 × 10−14 A µm−1, a static power consumption range of 1 fW µm−1–1 pW µm−1, and an output current ratio of 103 at 0.1 V supply voltage are achieved. The charge plasma heterojunction allows a stable (less than 3% variation) output current regardless of the gate voltage once it is turned on.
Original language | English |
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Article number | 2202153 |
Journal | Small |
Volume | 18 |
Issue number | 29 |
DOIs | |
State | Published - 21 Jul 2022 |
Keywords
- diodes
- doping
- heterojunctions
- homojunctions
- silicon
- transistors
- transition metal dichalcogenides