An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction

Onejae Sul, Hojun Seo, Eunsuk Choi, Sunjin Kim, Jinsil Gong, Jiyoung Bang, Hyoungbeen Ju, Sehoon Oh, Yeonsu Lee, Hyeonjeong Sun, Minjin Kwon, Kyungnam Kang, Jinki Hong, Eui Hyeok Yang, Yunchul Chung, Seung Beck Lee

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Development of a reliable doping method for 2D materials is a key issue to adopt the materials in the future microelectronic circuits and to replace the silicon, keeping the Moore's law toward the sub-10 nm channel length. Especially hole doping is highly required, because most of the transition metal dichalcogenides (TMDC) among the 2D materials are electron-doped by sulfur vacancies in their atomic structures. Here, hole doping of a TMDC, tungsten disulfide (WS2) using the silicon substrate as the dopant medium is demonstrated. An ultralow-power current sourcing transistor or a gated WS2 pn diode is fabricated based on a charge plasma pn heterojunction formed between the WS2 thin-film and heavily doped bulk silicon. An ultralow switchable output current down to 0.01 nA µm−1, an off-state current of ≈1 × 10−14 A µm−1, a static power consumption range of 1 fW µm−1–1 pW µm−1, and an output current ratio of 103 at 0.1 V supply voltage are achieved. The charge plasma heterojunction allows a stable (less than 3% variation) output current regardless of the gate voltage once it is turned on.

Original languageEnglish
Article number2202153
JournalSmall
Volume18
Issue number29
DOIs
StatePublished - 21 Jul 2022

Keywords

  • diodes
  • doping
  • heterojunctions
  • homojunctions
  • silicon
  • transistors
  • transition metal dichalcogenides

Fingerprint

Dive into the research topics of 'An Ultralow Power Mixed Dimensional Heterojunction Transistor Based on the Charge Plasma pn Junction'. Together they form a unique fingerprint.

Cite this