Atomistic simulations of heat transfer at carbon nanotube/Si interfaces

Ajing Cao, Jianmin Qu, Matthew Yao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Molecular dynamics simulations are used to compute the thermal conductance at the interface between an open-end single-wall carbon nanotube and a Si substrate for different CNT lengths and temperature. It is found that the thermal conductance at the CNT/Si interface increases with increasing temperature up to 1200K. The enhanced phonon transfer at higher temperatures is mainly due to the anharmonicity at the interfaces. Strong thermal and mechanical coupling is also observed, i.e., the thermal conductance at the CNT/Si interface is dependent on the contact pressure at the interface.

Original languageEnglish
Title of host publication2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages417-420
Number of pages4
DOIs
StatePublished - 2010
Event60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States
Duration: 1 Jun 20104 Jun 2010

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Conference

Conference60th Electronic Components and Technology Conference, ECTC 2010
Country/TerritoryUnited States
CityLas Vegas, NV
Period1/06/104/06/10

Fingerprint

Dive into the research topics of 'Atomistic simulations of heat transfer at carbon nanotube/Si interfaces'. Together they form a unique fingerprint.

Cite this