TY - GEN
T1 - Atomistic simulations of heat transfer at carbon nanotube/Si interfaces
AU - Cao, Ajing
AU - Qu, Jianmin
AU - Yao, Matthew
PY - 2010
Y1 - 2010
N2 - Molecular dynamics simulations are used to compute the thermal conductance at the interface between an open-end single-wall carbon nanotube and a Si substrate for different CNT lengths and temperature. It is found that the thermal conductance at the CNT/Si interface increases with increasing temperature up to 1200K. The enhanced phonon transfer at higher temperatures is mainly due to the anharmonicity at the interfaces. Strong thermal and mechanical coupling is also observed, i.e., the thermal conductance at the CNT/Si interface is dependent on the contact pressure at the interface.
AB - Molecular dynamics simulations are used to compute the thermal conductance at the interface between an open-end single-wall carbon nanotube and a Si substrate for different CNT lengths and temperature. It is found that the thermal conductance at the CNT/Si interface increases with increasing temperature up to 1200K. The enhanced phonon transfer at higher temperatures is mainly due to the anharmonicity at the interfaces. Strong thermal and mechanical coupling is also observed, i.e., the thermal conductance at the CNT/Si interface is dependent on the contact pressure at the interface.
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U2 - 10.1109/ECTC.2010.5490940
DO - 10.1109/ECTC.2010.5490940
M3 - Conference contribution
AN - SCOPUS:77955186945
SN - 9781424464104
T3 - Proceedings - Electronic Components and Technology Conference
SP - 417
EP - 420
BT - 2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
T2 - 60th Electronic Components and Technology Conference, ECTC 2010
Y2 - 1 June 2010 through 4 June 2010
ER -