Broadband THz attenuation by optically excited charge carriers in silicon

C. Karaalioglu, I. Chen, M. Brucherseifer, R. Martini, A. Meshal

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The THz transmittance of a silicon sample could be optically controlled, allowing broadband THz attenuation to less than 1% measured in a standard THz time domain spectroscopy setup.

Original languageEnglish
Title of host publicationOptical Terahertz Science and Technology, OTST 2005
DOIs
StatePublished - 2005
EventOptical Terahertz Science and Technology, OTST 2005 - Orlando, FL, United States
Duration: 14 Mar 200514 Mar 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceOptical Terahertz Science and Technology, OTST 2005
Country/TerritoryUnited States
CityOrlando, FL
Period14/03/0514/03/05

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