TY - GEN
T1 - Broadband THz attenuation by optically excited charge carriers in silicon
AU - Karaalioglu, C.
AU - Chen, I.
AU - Brucherseifer, M.
AU - Martini, R.
AU - Meshal, A.
PY - 2005
Y1 - 2005
N2 - The THz transmittance of a silicon sample could be optically controlled, allowing broadband THz attenuation to less than 1% measured in a standard THz time domain spectroscopy setup.
AB - The THz transmittance of a silicon sample could be optically controlled, allowing broadband THz attenuation to less than 1% measured in a standard THz time domain spectroscopy setup.
UR - http://www.scopus.com/inward/record.url?scp=85087597467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85087597467&partnerID=8YFLogxK
U2 - 10.1364/otst.2005.ma4
DO - 10.1364/otst.2005.ma4
M3 - Conference contribution
AN - SCOPUS:85087597467
SN - 1557527865
SN - 9781557527868
T3 - Optics InfoBase Conference Papers
BT - Optical Terahertz Science and Technology, OTST 2005
T2 - Optical Terahertz Science and Technology, OTST 2005
Y2 - 14 March 2005 through 14 March 2005
ER -