TY - JOUR
T1 - Characterizing the geometric and electronic structure of defects in the "29" copper surface oxide
AU - Therrien, Andrew J.
AU - Hensley, Alyssa J.R.
AU - Zhang, Renqin
AU - Pronschinske, Alex
AU - Marcinkowski, Matthew D.
AU - McEwen, Jean Sabin
AU - Sykes, E. Charles H.
N1 - Publisher Copyright:
© 2017 Author(s).
PY - 2017/12/14
Y1 - 2017/12/14
N2 - The geometric and electronic structural characterization of thin film metal oxides is of fundamental importance to many fields such as catalysis, photovoltaics, and electrochemistry. Surface defects are also well known to impact a material's performance in any such applications. Here, we focus on the "29" oxide Cu2O/Cu(111) surface and we observe two common structural defects which we characterize using scanning tunneling microscopy/spectroscopy and density functional theory. The defects are proposed to be O vacancies and Cu adatoms, which both show unique topographic and spectroscopic signatures. The spatially resolved electronic and charge state effects of the defects are investigated, and implications for their reactivity are given.
AB - The geometric and electronic structural characterization of thin film metal oxides is of fundamental importance to many fields such as catalysis, photovoltaics, and electrochemistry. Surface defects are also well known to impact a material's performance in any such applications. Here, we focus on the "29" oxide Cu2O/Cu(111) surface and we observe two common structural defects which we characterize using scanning tunneling microscopy/spectroscopy and density functional theory. The defects are proposed to be O vacancies and Cu adatoms, which both show unique topographic and spectroscopic signatures. The spatially resolved electronic and charge state effects of the defects are investigated, and implications for their reactivity are given.
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U2 - 10.1063/1.4996729
DO - 10.1063/1.4996729
M3 - Article
C2 - 29246067
AN - SCOPUS:85038447483
SN - 0021-9606
VL - 147
JO - Journal of Chemical Physics
JF - Journal of Chemical Physics
IS - 22
M1 - 224706
ER -