TY - JOUR
T1 - Chemical vapor deposition growth of a periodic array of single-layer MoS2 islands via lithographic patterning of an SiO2/Si substrate
AU - Sun, Dezheng
AU - Nguyen, Ariana E.
AU - Barroso, David
AU - Zhang, Xian
AU - Preciado, Edwin
AU - Bobek, Sarah
AU - Klee, Velveth
AU - Mann, John
AU - Bartels, Ludwig
N1 - Publisher Copyright:
© 2015 IOP Publishing Ltd.
PY - 2015/12/16
Y1 - 2015/12/16
N2 - The growth of micron-scale single-layer MoS2 islands is seeded and distributed at high fidelity by means of a regular array of micron-scale holes that extend through the oxide layer of a 300 nmSiO2/Si substrate. Low coverages exhibit individual sub-micron MoS2 islands directly adjacent to the seed positions. At moderate coverage the seed holes are encircled by merged MoS2 islands, whose overall shape and internal grain boundaries reveal coalescence out of several initial crystallites. Seeded islands are strictly monolayer in height, non-overlapping and they offer high photoluminescence as well as conventional Raman signatures.
AB - The growth of micron-scale single-layer MoS2 islands is seeded and distributed at high fidelity by means of a regular array of micron-scale holes that extend through the oxide layer of a 300 nmSiO2/Si substrate. Low coverages exhibit individual sub-micron MoS2 islands directly adjacent to the seed positions. At moderate coverage the seed holes are encircled by merged MoS2 islands, whose overall shape and internal grain boundaries reveal coalescence out of several initial crystallites. Seeded islands are strictly monolayer in height, non-overlapping and they offer high photoluminescence as well as conventional Raman signatures.
KW - Chemical vapor deposition
KW - Layered materials
KW - Lithographic patterning
KW - Molybdenum disulfide
KW - Selective growth
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U2 - 10.1088/2053-1583/2/4/045014
DO - 10.1088/2053-1583/2/4/045014
M3 - Article
AN - SCOPUS:84953391317
VL - 2
JO - 2D Materials
JF - 2D Materials
IS - 4
M1 - 045014
ER -