TY - JOUR
T1 - Chemical vapor deposition of carbon nanotubes on monolayer graphene substrates
T2 - Reduced etching via suppressed catalytic hydrogenation using C 2H4
AU - Kumar, Kitu
AU - Kim, Youn Su
AU - Li, Xin
AU - Ding, Junjun
AU - Fisher, Frank T.
AU - Yang, Eui Hyeok
PY - 2013/10/8
Y1 - 2013/10/8
N2 - In most envisioned applications, the full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach toward controlled CNT growth atop graphene substrates where the reaction equilibrium between the source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts toward CNT growth rather than graphene consumption. By utilizing C2H4 feedstock, we demonstrate that the low-temperature growth permissible with this gas suppresses undesirable catalytic hydrogenation and dramatically reduces the etching of the graphene layer to exhibit graphene-CNT hybrids with continuous, undamaged structures.
AB - In most envisioned applications, the full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach toward controlled CNT growth atop graphene substrates where the reaction equilibrium between the source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts toward CNT growth rather than graphene consumption. By utilizing C2H4 feedstock, we demonstrate that the low-temperature growth permissible with this gas suppresses undesirable catalytic hydrogenation and dramatically reduces the etching of the graphene layer to exhibit graphene-CNT hybrids with continuous, undamaged structures.
KW - 3D nanoarchitectures
KW - carbon nanotube growth
KW - catalytic hydrogenation
KW - chemical vapor deposition
KW - graphene
UR - http://www.scopus.com/inward/record.url?scp=84885397787&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885397787&partnerID=8YFLogxK
U2 - 10.1021/cm402052z
DO - 10.1021/cm402052z
M3 - Article
AN - SCOPUS:84885397787
SN - 0897-4756
VL - 25
SP - 3874
EP - 3879
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 19
ER -