Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum

Honghua Du, Zunde Yang, Matthew Libera, Dale C. Jacobson, Yu C. Wang, Robert F. Davis

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates

Original languageEnglish
Pages (from-to)330-335
Number of pages6
JournalJournal of the American Ceramic Society
Volume76
Issue number2
DOIs
StatePublished - Feb 1993

Fingerprint

Dive into the research topics of 'Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum'. Together they form a unique fingerprint.

Cite this