Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum

Honghua Du; Zunde Yang; Matthew Libera; Dale C. Jacobson; Yu C. Wang; Robert F. Davis

doi:10.1111/j.1151-2916.1993.tb03787.x

Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum

Honghua Du
, Zunde Yang
, Matthew Libera
, Dale C. Jacobson
, Yu C. Wang
, Robert F. Davis

Stevens Institute of Technology
Nokia
North Carolina State University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 10¹⁷ ions/cm² at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates

Original language	English
Pages (from-to)	330-335
Number of pages	6
Journal	Journal of the American Ceramic Society
Volume	76
Issue number	2
DOIs	https://doi.org/10.1111/j.1151-2916.1993.tb03787.x
State	Published - Feb 1993

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@article{9606f9ba600140d3983125d2a35ce236,

title = "Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum",

abstract = "Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates",

author = "Honghua Du and Zunde Yang and Matthew Libera and Jacobson, \{Dale C.\} and Wang, \{Yu C.\} and Davis, \{Robert F.\}",

year = "1993",

month = feb,

doi = "10.1111/j.1151-2916.1993.tb03787.x",

language = "English",

volume = "76",

pages = "330--335",

number = "2",

}

TY - JOUR

T1 - Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum

AU - Du, Honghua

AU - Yang, Zunde

AU - Libera, Matthew

AU - Jacobson, Dale C.

AU - Wang, Yu C.

AU - Davis, Robert F.

PY - 1993/2

Y1 - 1993/2

N2 - Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates

AB - Single‐crystal β‐SiC was implanted with aluminum to 3.90 × 1017 ions/cm2 at 168 keV at 773 K. The resultant compositional and structural characteristics were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, X‐ray photoelectron spectroscopy, and cross‐sectional transmission electron microscopy. No aluminum redistribution was observed during implantation. The Si‐to‐C ratio exhibited a negative deviation from unity in the implanted region. The shift in the photoelectron binding energies indicated the formation of aluminum carbide. The studies by electron microscopy showed that the implanted region consists of slightly misoriented β‐SiC crystals and textured crystalline aluminum carbide precipitates

UR - https://www.scopus.com/pages/publications/0027543636

UR - https://www.scopus.com/pages/publications/0027543636#tab=citedBy

U2 - 10.1111/j.1151-2916.1993.tb03787.x

DO - 10.1111/j.1151-2916.1993.tb03787.x

M3 - Article

AN - SCOPUS:0027543636

SN - 0002-7820

VL - 76

SP - 330

EP - 335

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 2

ER -

Chemistry and Structure of Beta Silicon Carbide Implanted with High‐Dose Aluminum

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