Combined wavelength and frequency modulation spectroscopy: A novel diagnostic tool for materials processing

H. C. Sun; E. A. Whittaker; Y. W. Bae; C. K. Ng; V. Patel; W. H. Tam; S. McGuire; B. Singh; B. Gallois

doi:10.1364/AO.32.000885

Combined wavelength and frequency modulation spectroscopy: A novel diagnostic tool for materials processing

H. C. Sun
, E. A. Whittaker
, Y. W. Bae
, C. K. Ng
, V. Patel
, W. H. Tam
, S. McGuire
, B. Singh
, B. Gallois

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

By applying both low-frequency wavelength modulation and high-frequency phase modulation to a laser diode, we develop a sensitive, high-bandwidth chemical diagnostic tool that is applicable to a variety of gas-phase processing environments. Specific chemical species are identified and monitored through their infrared absorption spectra, and the modulation methods allow for sensitive detection that is free of window and other reflection-driven interference fringes. Absorbance limits of 5.3 × 10⁻⁸ and 1.9 × 10⁻⁷ are obtained for an AlGaAs diode laser and a lead-salt diode laser, respectively. We discuss applications to plasma etching and chemical vapor deposition.

Original language	English
Pages (from-to)	885-893
Number of pages	9
Journal	Applied Optics
Volume	32
Issue number	6
DOIs	https://doi.org/10.1364/AO.32.000885
State	Published - 20 Feb 1993

Keywords

Laser absorption spectroscopy
Metal-organic chemical vapor deposition
Plasma etching
Tunable diode laser

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10.1364/AO.32.000885

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title = "Combined wavelength and frequency modulation spectroscopy: A novel diagnostic tool for materials processing",

abstract = "By applying both low-frequency wavelength modulation and high-frequency phase modulation to a laser diode, we develop a sensitive, high-bandwidth chemical diagnostic tool that is applicable to a variety of gas-phase processing environments. Specific chemical species are identified and monitored through their infrared absorption spectra, and the modulation methods allow for sensitive detection that is free of window and other reflection-driven interference fringes. Absorbance limits of 5.3 × 10−8 and 1.9 × 10−7 are obtained for an AlGaAs diode laser and a lead-salt diode laser, respectively. We discuss applications to plasma etching and chemical vapor deposition.",

keywords = "Laser absorption spectroscopy, Metal-organic chemical vapor deposition, Plasma etching, Tunable diode laser",

author = "Sun, \{H. C.\} and Whittaker, \{E. A.\} and Bae, \{Y. W.\} and Ng, \{C. K.\} and V. Patel and Tam, \{W. H.\} and S. McGuire and B. Singh and B. Gallois",

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language = "English",

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TY - JOUR

T1 - Combined wavelength and frequency modulation spectroscopy

T2 - A novel diagnostic tool for materials processing

AU - Sun, H. C.

AU - Whittaker, E. A.

AU - Bae, Y. W.

AU - Ng, C. K.

AU - Patel, V.

AU - Tam, W. H.

AU - McGuire, S.

AU - Singh, B.

AU - Gallois, B.

PY - 1993/2/20

Y1 - 1993/2/20

N2 - By applying both low-frequency wavelength modulation and high-frequency phase modulation to a laser diode, we develop a sensitive, high-bandwidth chemical diagnostic tool that is applicable to a variety of gas-phase processing environments. Specific chemical species are identified and monitored through their infrared absorption spectra, and the modulation methods allow for sensitive detection that is free of window and other reflection-driven interference fringes. Absorbance limits of 5.3 × 10−8 and 1.9 × 10−7 are obtained for an AlGaAs diode laser and a lead-salt diode laser, respectively. We discuss applications to plasma etching and chemical vapor deposition.

AB - By applying both low-frequency wavelength modulation and high-frequency phase modulation to a laser diode, we develop a sensitive, high-bandwidth chemical diagnostic tool that is applicable to a variety of gas-phase processing environments. Specific chemical species are identified and monitored through their infrared absorption spectra, and the modulation methods allow for sensitive detection that is free of window and other reflection-driven interference fringes. Absorbance limits of 5.3 × 10−8 and 1.9 × 10−7 are obtained for an AlGaAs diode laser and a lead-salt diode laser, respectively. We discuss applications to plasma etching and chemical vapor deposition.

KW - Laser absorption spectroscopy

KW - Metal-organic chemical vapor deposition

KW - Plasma etching

KW - Tunable diode laser

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UR - https://www.scopus.com/pages/publications/0000215347#tab=citedBy

U2 - 10.1364/AO.32.000885

DO - 10.1364/AO.32.000885

M3 - Article

AN - SCOPUS:0000215347

SN - 1559-128X

VL - 32

SP - 885

EP - 893

JO - Applied Optics

JF - Applied Optics

IS - 6

ER -

Combined wavelength and frequency modulation spectroscopy: A novel diagnostic tool for materials processing

Abstract

Keywords

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