Abstract
An approach employed for the investigation of the dephasing of interband dynamics in four wave mixing is used to study the dephasing of the intraband dynamics responsible for THz emission. For higher carrier densities, the dominant dephasing process at low temperature is carrier-carrier scattering. The presence of incoherent relaxed background carriers generated by a prepulse lead to a stronger dephasing than in the case where the same amount of coherent scatterers are created. A superlattice is used which consists of 9.7-nm GaAs wells separated by 1.7-nm Al0.3Ga0.7As barriers with a calculated width of the first electron miniband of 18 meV is used.
Original language | English |
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Pages | 56-57 |
Number of pages | 2 |
State | Published - 1998 |
Event | Proceedings of the 1998 International Quantum Electronics Conference - San Francisco, CA, USA Duration: 3 May 1998 → 8 May 1998 |
Conference
Conference | Proceedings of the 1998 International Quantum Electronics Conference |
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City | San Francisco, CA, USA |
Period | 3/05/98 → 8/05/98 |