Developmental MOS controlled thyristors (MCT) behavior

R. Pastore, C. Braun, M. Weiner, S. Schneider

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Although the MCT is still at an early stage of development and at the preproduction stage, experiments indicate that it has potential for pulse power and power conditioning applications. In these experiments, epitaxial substrate devices with a range of rated blocking voltages from 500 V to 1000 V and peak controllable currents from 30 A to 60 A were studied. Many of these devices were operated at up to 80% of the rated blocking voltages. The devices have turn-on times (10-90%) of about 0.5 μs and turn-off times (10-90%) ≤ 1.5 μs at the peak controllable current. Forward voltage drops are less than 1.5 V. Single MCTs have been operated at peak powers of 24 kW, average powers of 2 kW, and repetition rates up to 50 kHz at a 50% duty. Operation of series arrays of five devices have been demonstrated at 2000 V at 80% of the rated blocking voltage per device. Snubber circuit requirements were small, with a 0.1 μF snubber/device adequate for devices from the same preproduction batch. Parallel operation was demonstrated with three devices in parallel using MCTs with both similar and very different operating characteristics. Finally a 3 × 2 series-parallel array was demonstrated.

Original languageEnglish
Pages (from-to)391-399
Number of pages9
JournalIEEE Conference Record of Power Modulator Symposium
StatePublished - Jun 1990
Event1990 Nineteenth Power Modulator Symposium - San Diego, CA, USA
Duration: 26 Jun 199028 Jun 1990

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