Dielectric charging in capacitive RF MEMS switches: The effect of electric stress

Negar Tavassolian, Matroni Koutsoureli, George Papaioannou, Benjamin Lacroix, John Papapolymerou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

This paper investigates the dependence of dielectric charging on the pull-in state electric field and temperature in capacitive RF MEMS switches with silicon dioxide as the dielectric material. Electric field intensities determined by bias levels extending from 0% to 50% above pull-in voltage are employed. Experimental results indicate that charging is thermally activated and the activation energy increases with increasing the intensity of the pull-in state electric field. These results provide a deeper insight to the trapping processes in dielectric materials under different levels of electric stress and aid in better modeling of charging processes in capacitive RF MEMS switches.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages1833-1836
Number of pages4
StatePublished - 2010
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 7 Dec 201010 Dec 2010

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2010 Asia-Pacific Microwave Conference, APMC 2010
Country/TerritoryJapan
CityYokohama
Period7/12/1010/12/10

Keywords

  • Capacitive switches
  • RF MEMS
  • dielectric charging
  • electric stress

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