Abstract
By focusing on thermally-activated processes, a straight-forward and reliable method is devised to investigate dielectric charging effects in capacitive RF MEMS switches subjected to extended durations of electric stress. A general model of distributed charge and air gap is adopted and further developed for theoretical formulation. Experiments performed over a wide temperature range agree well with the theoretical model. It is shown that for extended stress periods, the algebraic sum of the pull-out voltages is thermally activated, and follows the same temperature trend as the voltage corresponding to the minimum capacitance of the switch. Since pull-out voltages can be measured accurately with little effort, this discovery significantly simplifies the study of thermally-activated processes in these switches. Finally, it is shown that charging increases with time, following a power-law relation.
| Original language | English |
|---|---|
| Article number | 6035743 |
| Pages (from-to) | 592-594 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 21 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2011 |
Keywords
- Dielectric charging
- electric stress
- radio frequency (RF) micro-electromechanical system (MEMS) switches
- silicon dioxide
- thermally-activated processes
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