TY - JOUR
T1 - Displaced substitutional phosphorus acceptors in zinc selenide
AU - Wolverson, D.
AU - Davies, J. J.
AU - Strauf, S.
AU - Michler, P.
AU - Gutowski, J.
AU - Klude, M.
AU - Hommel, D.
AU - Ohkawa, K.
AU - Tournié, E.
AU - Faurie, J. P.
PY - 2002
Y1 - 2002
N2 - Spin-flip Raman scattering experiments reveal that shallow phosphorus acceptors in ZnSe grown epitaxially on GaAs are subject to a local crystal field of trigonat symmetry. In relaxed layers, the trigonal field dominates the macroscopic biaxial tensile strain field. The trigonal field is also observed in pseudomorphic layers, where the sign of the overall macroscopic biaxial strain is reversed. In both cases, the wavefunction of the hole bound at the acceptor appears to be sufficiently localised for the effects of the macroscopic strain field to be severely reduced. This increased localisation relative to nitrogen acceptors and the appearance of the trigonal field are in excellent agreement with the results of previous total energy pseudopotential calculations, which predict that substitutional phosphorus acceptors should be displaced from selenium sites in 〈111〉 directions.
AB - Spin-flip Raman scattering experiments reveal that shallow phosphorus acceptors in ZnSe grown epitaxially on GaAs are subject to a local crystal field of trigonat symmetry. In relaxed layers, the trigonal field dominates the macroscopic biaxial tensile strain field. The trigonal field is also observed in pseudomorphic layers, where the sign of the overall macroscopic biaxial strain is reversed. In both cases, the wavefunction of the hole bound at the acceptor appears to be sufficiently localised for the effects of the macroscopic strain field to be severely reduced. This increased localisation relative to nitrogen acceptors and the appearance of the trigonal field are in excellent agreement with the results of previous total energy pseudopotential calculations, which predict that substitutional phosphorus acceptors should be displaced from selenium sites in 〈111〉 directions.
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U2 - 10.1002/1521-3951(200201)229:1<257::AID-PSSB257>3.0.CO;2-G
DO - 10.1002/1521-3951(200201)229:1<257::AID-PSSB257>3.0.CO;2-G
M3 - Article
AN - SCOPUS:0035994383
SN - 0370-1972
VL - 229
SP - 257
EP - 260
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 1
ER -