Abstract
The formation of C54 TiSi2 on undoped and boron-doped single crystal silicon substrates under rapid thermal annealing conditions was studied. The C49 to C54 phase transformation occurred at 760 °C and 810 °C for the undoped and boron-doped samples respectively. High resolution transmission electron microscopy observations revealed a thick 20 nm TiN layer on the C54 TiSi2 film in the boron-doped samples while fine dispersed TiN particles was formed on the top of the undoped samples. The boron-doped samples also produced thinner silicide layers with rough TiSi2/S1(100) interface.
| Original language | English |
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| Pages (from-to) | 303-308 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 441 |
| State | Published - 1997 |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996 |