Abstract
Single crystal β-SiC was self-implanted with high-dose Si and C at 773 K. In situ lattice recovery occurred and SiC remained single crystalline during implantation. Notable structural damage resulted in the implanted region. The residual damage significantly accelerated the oxidation rate of SiC at 1373 K but caused no appreciable rate increase at 1573 K. The diminishing of the effect of the damages on oxidation can be attributed to enhanced damage annealing with temperature.
Original language | English |
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Pages (from-to) | 423-425 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 4 |
DOIs | |
State | Published - 1993 |