Effect of self-implantation on structure and oxidation behavior of single crystal β-SiC

Honghua Du, Matthew Libera, Zunde Yang, Po Jen Lai, Dale C. Jacobson, Yu C. Wang, Robert F. Davis

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Single crystal β-SiC was self-implanted with high-dose Si and C at 773 K. In situ lattice recovery occurred and SiC remained single crystalline during implantation. Notable structural damage resulted in the implanted region. The residual damage significantly accelerated the oxidation rate of SiC at 1373 K but caused no appreciable rate increase at 1573 K. The diminishing of the effect of the damages on oxidation can be attributed to enhanced damage annealing with temperature.

Original languageEnglish
Pages (from-to)423-425
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number4
DOIs
StatePublished - 1993

Fingerprint

Dive into the research topics of 'Effect of self-implantation on structure and oxidation behavior of single crystal β-SiC'. Together they form a unique fingerprint.

Cite this