Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture

Y. Cheong, H. Du, S. P. Withrow

Research output: Contribution to journalConference articlepeer-review

Abstract

The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.

Original languageEnglish
Pages (from-to)665-670
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume438
DOIs
StatePublished - 1996
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 2 Dec 19966 Dec 1996

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