TY - JOUR
T1 - Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture
AU - Cheong, Y.
AU - Du, H.
AU - Withrow, S. P.
PY - 1996
Y1 - 1996
N2 - The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.
AB - The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.
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U2 - 10.1557/proc-438-665
DO - 10.1557/proc-438-665
M3 - Conference article
AN - SCOPUS:0030373775
SN - 0272-9172
VL - 438
SP - 665
EP - 670
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - Proceedings of the 1996 MRS Fall Meeting
Y2 - 2 December 1996 through 6 December 1996
ER -