Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture

Y. Cheong; H. Du; S. P. Withrow

doi:10.1557/proc-438-665

Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture

Y. Cheong
, H. Du
, S. P. Withrow

Stevens Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si₃N₄ ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si₃N₄ samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si₃N₄ was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.

Original language	English
Pages (from-to)	665-670
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	438
DOIs	https://doi.org/10.1557/proc-438-665
State	Published - 1996
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Access to Document

10.1557/proc-438-665

Cite this

@article{b40cb77c335946d7b9c90e2d74939519,

title = "Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture",

abstract = "The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.\%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.",

author = "Y. Cheong and H. Du and Withrow, \{S. P.\}",

year = "1996",

doi = "10.1557/proc-438-665",

language = "English",

volume = "438",

pages = "665--670",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture

AU - Cheong, Y.

AU - Du, H.

AU - Withrow, S. P.

PY - 1996

Y1 - 1996

N2 - The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.

AB - The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1 atm and at 900°-1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103-112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.

UR - https://www.scopus.com/pages/publications/0030373775

UR - https://www.scopus.com/pages/publications/0030373775#tab=citedBy

U2 - 10.1557/proc-438-665

DO - 10.1557/proc-438-665

M3 - Conference article

AN - SCOPUS:0030373775

SN - 0272-9172

VL - 438

SP - 665

EP - 670

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Effects of aluminum implantation on the oxidation behavior of silicon nitride in a sodium nitrate-oxygen gas mixture

Abstract

Access to Document

Other files and links

Fingerprint

Cite this