TY - JOUR
T1 - Effects of etchants in the transfer of chemical vapor deposited graphene
AU - Wang, M.
AU - Yang, E. H.
AU - Vajtai, R.
AU - Kono, J.
AU - Ajayan, P. M.
N1 - Publisher Copyright:
© 2018 Author(s).
PY - 2018/5/21
Y1 - 2018/5/21
N2 - The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.
AB - The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.
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U2 - 10.1063/1.5009253
DO - 10.1063/1.5009253
M3 - Article
AN - SCOPUS:85047372118
SN - 0021-8979
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 19
M1 - 195103
ER -