Effects of initial substrate surface on microstructure of Si3 N4 deposited by LPCVD

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Abstract

The morphology of Si3N4 deposited on Al2O3, BN, and SiC by low pressure chemical vapor deposition (LPCVD) was characterized as a function of deposition temperature. At 1200°C, faceted Si3N4 crystallites were deposited on SiC whereas Si3N4 deposited on the other substrates tended to be amorphous. With an increase in temperature to 1430°C, Si3 N4 deposited on these substrates was polycrystalline. At this temperature, the microstructure of Si3N4 was not significantly influenced by the changes in substrate surface.

Original languageEnglish
Title of host publicationEvolution of Surface and Thin Film Microstructure
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Pages665-668
Number of pages4
StatePublished - 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 30 Nov 19924 Dec 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume280
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period30/11/924/12/92

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