@inproceedings{8c4fe8eec6394310bd6d3d52cfccdac6,
title = "Effects of initial substrate surface on microstructure of Si3 N4 deposited by LPCVD",
abstract = "The morphology of Si3N4 deposited on Al2O3, BN, and SiC by low pressure chemical vapor deposition (LPCVD) was characterized as a function of deposition temperature. At 1200°C, faceted Si3N4 crystallites were deposited on SiC whereas Si3N4 deposited on the other substrates tended to be amorphous. With an increase in temperature to 1430°C, Si3 N4 deposited on these substrates was polycrystalline. At this temperature, the microstructure of Si3N4 was not significantly influenced by the changes in substrate surface.",
author = "Lee, {Woo Y.}",
year = "1993",
language = "English",
isbn = "1558991751",
series = "Materials Research Society Symposium Proceedings",
pages = "665--668",
editor = "Atwater, {Harry A.} and Eric Chason and Grabow, {Marcia H.} and Lagally, {Max G.}",
booktitle = "Evolution of Surface and Thin Film Microstructure",
note = "Proceedings of the 1992 Fall Meeting of the Materials Research Society ; Conference date: 30-11-1992 Through 04-12-1992",
}