Effects of SiF4 and NH3 Concentrations on the Low‐Pressure CVD of Polycrystalline α‐Si3N4

Woo Y. Lee, James R. Strife

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4 Scopus citations

Abstract

The effects of SiF4 and NH4 concentrations on the growth rate of polycrystalline α‐Si3N4 were examined in the pressure range of 1.5 to 10.0 torr (1 torr ∽ 1.33 × 102 Pa). At low SiF4 partial pressures, the growth rate increased almost linearly with the SiF4 partial pressure. The relationship appeared to become zeroth‐order at high SiF4 partial pressures. Under excess NH3 conditions, the growth rate was not significantly affected in any consistent manner by changes in the NH3 partial pressure. A surface kinetic rate mechanism which qualitatively described the observed deposition behavior was postulated and discussed.

Original languageEnglish
Pages (from-to)542-544
Number of pages3
JournalJournal of the American Ceramic Society
Volume76
Issue number2
DOIs
StatePublished - Feb 1993

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