Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications

Y. H. Jeong; J. C. Kim; J. B. Lim; K. P. Hong; S. Nahm; H. J. Sun; T. H. Ghong; Y. D. Kim; H. J. Lee

doi:10.1063/1.2718277

Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications

Y. H. Jeong
, J. C. Kim
, J. B. Lim
, K. P. Hong
, S. Nahm
, H. J. Sun
, T. H. Ghong
, Y. D. Kim
, H. J. Lee

Department of Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A homogeneous crystalline Sm2 Ti2 O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 1.34 nA cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.

Original language	English
Article number	084108
Journal	Journal of Applied Physics
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.2718277
State	Published - 2007

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title = "Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications",

abstract = "A homogeneous crystalline Sm2 Ti2 O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 1.34 nA cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.",

author = "Jeong, \{Y. H.\} and Kim, \{J. C.\} and Lim, \{J. B.\} and Hong, \{K. P.\} and S. Nahm and Sun, \{H. J.\} and Ghong, \{T. H.\} and Kim, \{Y. D.\} and Lee, \{H. J.\}",

year = "2007",

doi = "10.1063/1.2718277",

language = "English",

volume = "101",

number = "8",

}

TY - JOUR

T1 - Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications

AU - Jeong, Y. H.

AU - Kim, J. C.

AU - Lim, J. B.

AU - Hong, K. P.

AU - Nahm, S.

AU - Sun, H. J.

AU - Ghong, T. H.

AU - Kim, Y. D.

AU - Lee, H. J.

PY - 2007

Y1 - 2007

N2 - A homogeneous crystalline Sm2 Ti2 O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 1.34 nA cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.

AB - A homogeneous crystalline Sm2 Ti2 O7 (ST) phase was formed in films grown at temperatures ranging between 100 and 200 °C and subsequently annealed at 900 °C. The ST film had a large dielectric constant of 58, which is similar to that of ST ceramics. The leakage current density of the ST film was low and the Poole-Frenkel emission was suggested as being the leakage current mechanism. The ST film had a negative quadratic voltage coefficient of capacitance (VCC), possibly due to the dipolar relaxation. The 100-nm-thick ST film had a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 1.34 nA cm2 at 2 V. Its quadratic and linear VCCs were -99.5 ppm V2 and 11 ppm/V, respectively, with a low temperature coefficient of capacitance of 135 ppm°C at 100 kHz. These results confirmed the potential for the ST film to be used as a high performance metal-insulator-metal capacitor.

UR - https://www.scopus.com/pages/publications/34247866425

UR - https://www.scopus.com/pages/publications/34247866425#tab=citedBy

U2 - 10.1063/1.2718277

DO - 10.1063/1.2718277

M3 - Article

AN - SCOPUS:34247866425

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 084108

ER -

Electrical properties of the Sm2 Ti2 O7 thin films for metal-insulator- metal capacitor applications

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