Abstract
We report a quantum mechanics study on the electronic structure and contact resistance at an open-end carbon nanotube and copper interface. The local density of states near the carbon nanotube (CNT)/Cu interface are computed using density functional theory (DFT), and the transmission coefficient is calculated using a nonequilibrium Green's function method in conjunction with DFT. The current-voltage relation of the simulating cell is obtained by using the Landauer-Buttiker formula, from which the contact resistance can be determined. Our results indicate that the contact resistance of the Cu/CNT/Cu system is comparable to that of solder/Cu interface in electronic packaging.
Original language | English |
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Article number | 102108 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 10 |
DOIs | |
State | Published - 2010 |