Electronic structure and contact resistance at an open-end carbon nanotube and copper interface

Feng Gao, Jianmin Qu, Matthew Yao

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33 Scopus citations

Abstract

We report a quantum mechanics study on the electronic structure and contact resistance at an open-end carbon nanotube and copper interface. The local density of states near the carbon nanotube (CNT)/Cu interface are computed using density functional theory (DFT), and the transmission coefficient is calculated using a nonequilibrium Green's function method in conjunction with DFT. The current-voltage relation of the simulating cell is obtained by using the Landauer-Buttiker formula, from which the contact resistance can be determined. Our results indicate that the contact resistance of the Cu/CNT/Cu system is comparable to that of solder/Cu interface in electronic packaging.

Original languageEnglish
Article number102108
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - 2010

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