Abstract
High-dose and multi-energy aluminum implantation of α-SiC (0001̄) was carried out to achieve a broad aluminum distribution extending from the sample surface to a depth of approximately 350 nm. Oxidation resistance of the implanted crystals was studied in 1 atm flowing oxygen at 1300 °C. Aluminum implantation resulted in a 45% improvement in the oxidation resistance of α-SiC as compared with unimplanted crystals due to the formation of structurally dense mullite (3Al2O3.2SiO2) in the oxidation scale.
Original language | English |
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Pages (from-to) | 281-286 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 327 |
State | Published - 1994 |
Event | Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: 29 Nov 1993 → 2 Dec 1993 |