Enhancement of oxidation resistance of silicon carbide by high-dose and multi-energy aluminum implantation

Zunde Yang, Honghua Du, Matthew Libera, Stephen P. Withrow, Luis M. Casas, Richard T. Lareau

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

High-dose and multi-energy aluminum implantation of α-SiC (0001̄) was carried out to achieve a broad aluminum distribution extending from the sample surface to a depth of approximately 350 nm. Oxidation resistance of the implanted crystals was studied in 1 atm flowing oxygen at 1300 °C. Aluminum implantation resulted in a 45% improvement in the oxidation resistance of α-SiC as compared with unimplanted crystals due to the formation of structurally dense mullite (3Al2O3.2SiO2) in the oxidation scale.

Original languageEnglish
Pages (from-to)281-286
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume327
StatePublished - 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

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