TY - JOUR
T1 - Exciton Dipole Orientation of Strain-Induced Quantum Emitters in WSe2
AU - Luo, Yue
AU - Liu, Na
AU - Kim, Bumho
AU - Hone, James
AU - Strauf, Stefan
N1 - Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/7/8
Y1 - 2020/7/8
N2 - Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through strain deformation. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ angular-resolved spectroscopy to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g = 8.52 ± 1.2 unchanged in the entire emission wavelength. These findings provide experimental support of the interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics.
AB - Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through strain deformation. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ angular-resolved spectroscopy to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g = 8.52 ± 1.2 unchanged in the entire emission wavelength. These findings provide experimental support of the interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics.
KW - 2D materials
KW - angular-resolved spectroscopy
KW - cavity coupling
KW - exciton dipole orientation
KW - g-factor
KW - quantum emitter
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U2 - 10.1021/acs.nanolett.0c01358
DO - 10.1021/acs.nanolett.0c01358
M3 - Article
C2 - 32551697
AN - SCOPUS:85088210627
SN - 1530-6984
VL - 20
SP - 5119
EP - 5126
JO - Nano Letters
JF - Nano Letters
IS - 7
ER -