Fabrication of buried nanochannels by transferring metal nanowire patterns

Daniel S. Choi, Eui Hyeok Yang

Research output: Contribution to journalArticlepeer-review

Abstract

A method of fabricating channels with widths of 30-50 nm in silicon substrates with channels buried under overlying layers of dielectric materials has been demonstrated. Buried nanochannels with an opening size of 20 x 80 nm2 have been successfully fabricated on a silicon wafer by transferring metal nanowire patterns. With further refinement, the method might be useful for fabricating nanochannels for the manipulation and analysis of large biomolecules at single-molecule resolution.

Original languageEnglish
Pages (from-to)315-319
Number of pages5
JournalSensors and Materials
Volume21
Issue number6
StatePublished - 2009

Keywords

  • Fib milling
  • Focused ion beam
  • Metal nanowire
  • Nanochannel
  • Oxide nanowire
  • Pattern transfer

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