Abstract
A method of fabricating channels with widths of 30-50 nm in silicon substrates with channels buried under overlying layers of dielectric materials has been demonstrated. Buried nanochannels with an opening size of 20 x 80 nm2 have been successfully fabricated on a silicon wafer by transferring metal nanowire patterns. With further refinement, the method might be useful for fabricating nanochannels for the manipulation and analysis of large biomolecules at single-molecule resolution.
Original language | English |
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Pages (from-to) | 315-319 |
Number of pages | 5 |
Journal | Sensors and Materials |
Volume | 21 |
Issue number | 6 |
State | Published - 2009 |
Keywords
- Fib milling
- Focused ion beam
- Metal nanowire
- Nanochannel
- Oxide nanowire
- Pattern transfer