@inproceedings{ad18257d434643d38a681972d84fe501,
title = "Fabrication of silicon nanostructures with various sidewall profiles and sharp tips",
abstract = "We report a simple but effective method to fabricate high-aspect-ratio silicon nanostructures with ∼230 nm pitch (i.e., period) using interference lithography followed by deep reactive ion etching (DRIE). Sidewall profiles of nano-grating and nano-post patterns are controlled through etching parameters of DRIE. We also show that tips with a pointed and re-entrant profile can be created. The tip can further be sharpened by thermal oxidation and subsequent wet etching of the oxide. Nanostructures with various sidewall profiles and sharp tips open new application possibilities not only in electronics but also in other engineering and general areas.",
keywords = "Deep reactive ion etching (DRIE), Interference lithography, Nanostructures, Profile control, Sharp tip",
author = "Choi, {Chang Hwan} and Kim, {Chang Jin}",
year = "2005",
language = "English",
isbn = "0780389948",
series = "Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05",
pages = "168--171",
booktitle = "TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers",
note = "13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 ; Conference date: 05-06-2005 Through 09-06-2005",
}