Fabrication of silicon nanostructures with various sidewall profiles and sharp tips

Chang Hwan Choi, Chang Jin Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

We report a simple but effective method to fabricate high-aspect-ratio silicon nanostructures with ∼230 nm pitch (i.e., period) using interference lithography followed by deep reactive ion etching (DRIE). Sidewall profiles of nano-grating and nano-post patterns are controlled through etching parameters of DRIE. We also show that tips with a pointed and re-entrant profile can be created. The tip can further be sharpened by thermal oxidation and subsequent wet etching of the oxide. Nanostructures with various sidewall profiles and sharp tips open new application possibilities not only in electronics but also in other engineering and general areas.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages168-171
Number of pages4
StatePublished - 2005
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 5 Jun 20059 Jun 2005

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Conference

Conference13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Country/TerritoryKorea, Republic of
CitySeoul
Period5/06/059/06/05

Keywords

  • Deep reactive ion etching (DRIE)
  • Interference lithography
  • Nanostructures
  • Profile control
  • Sharp tip

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