TY - JOUR
T1 - Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor Device
AU - Li, Yi
AU - Ye, Fan
AU - Xu, Jie
AU - Zhang, Wei
AU - Feng, Philip X.L.
AU - Zhang, Xian
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/10
Y1 - 2018/10
N2 - Thermal management in 2-D electronics is critical for optimizing their performances due to the growing heat generations at the nanoscale. Here, we use Raman thermometry to study the Joule heating of a MoS2 field-effect transistor encapsulated by hexagonal boron nitride and with graphene electrodes. We show a sensitive temperature increase relevant to the heating power, which is tunable by the global back gate as well as the drain voltage. Our results provide a simple approach to characterizing the heat dissipation of microscopic devices and to controlling their temperatures.
AB - Thermal management in 2-D electronics is critical for optimizing their performances due to the growing heat generations at the nanoscale. Here, we use Raman thermometry to study the Joule heating of a MoS2 field-effect transistor encapsulated by hexagonal boron nitride and with graphene electrodes. We show a sensitive temperature increase relevant to the heating power, which is tunable by the global back gate as well as the drain voltage. Our results provide a simple approach to characterizing the heat dissipation of microscopic devices and to controlling their temperatures.
KW - 2-D materials
KW - MoS
KW - Raman
KW - field-effect transistors (FETs)
KW - nanoelectronics
KW - thermal dissipation
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U2 - 10.1109/TED.2018.2851945
DO - 10.1109/TED.2018.2851945
M3 - Article
AN - SCOPUS:85050763845
SN - 0018-9383
VL - 65
SP - 4068
EP - 4072
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
M1 - 8421629
ER -