Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor Device

Yi Li, Fan Ye, Jie Xu, Wei Zhang, Philip X.L. Feng, Xian Zhang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Thermal management in 2-D electronics is critical for optimizing their performances due to the growing heat generations at the nanoscale. Here, we use Raman thermometry to study the Joule heating of a MoS2 field-effect transistor encapsulated by hexagonal boron nitride and with graphene electrodes. We show a sensitive temperature increase relevant to the heating power, which is tunable by the global back gate as well as the drain voltage. Our results provide a simple approach to characterizing the heat dissipation of microscopic devices and to controlling their temperatures.

Original languageEnglish
Article number8421629
Pages (from-to)4068-4072
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume65
Issue number10
DOIs
StatePublished - Oct 2018

Keywords

  • 2-D materials
  • MoS
  • Raman
  • field-effect transistors (FETs)
  • nanoelectronics
  • thermal dissipation

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