Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor Device

Thermal management in 2-D electronics is critical for optimizing their performances due to the growing heat generations at the nanoscale. Here, we use Raman thermometry to study the Joule heating of a MoS₂ field-effect transistor encapsulated by hexagonal boron nitride and with graphene electrodes. We show a sensitive temperature increase relevant to the heating power, which is tunable by the global back gate as well as the drain voltage. Our results provide a simple approach to characterizing the heat dissipation of microscopic devices and to controlling their temperatures.