TY - JOUR
T1 - Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers
T2 - Substrate and Electric-Field Effect
AU - Kang, Kyungnam
AU - Godin, Kyle
AU - Kim, Young Duck
AU - Fu, Shichen
AU - Cha, Wujoon
AU - Hone, James
AU - Yang, Eui Hyeok
N1 - Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2017/5/10
Y1 - 2017/5/10
N2 - Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS2) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS2 on SiO2, graphene/SiO2, and on graphene suspended in air is elucidated. While WS2 on a SiO2 substrate begins oxidation within weeks, epitaxially grown WS2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS2 on a SiO2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.
AB - Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS2) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS2 on SiO2, graphene/SiO2, and on graphene suspended in air is elucidated. While WS2 on a SiO2 substrate begins oxidation within weeks, epitaxially grown WS2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS2 on a SiO2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.
KW - WS/graphene heterostructures
KW - antioxidation of WS monolayers
KW - epitaxial growth
KW - surface electric field
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U2 - 10.1002/adma.201603898
DO - 10.1002/adma.201603898
M3 - Article
C2 - 28234414
AN - SCOPUS:85018754464
SN - 0935-9648
VL - 29
JO - Advanced Materials
JF - Advanced Materials
IS - 18
M1 - 1603898
ER -