Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric-Field Effect

Kyungnam Kang, Kyle Godin, Young Duck Kim, Shichen Fu, Wujoon Cha, James Hone, Eui Hyeok Yang

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51 Scopus citations

Abstract

Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS2) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS2 on SiO2, graphene/SiO2, and on graphene suspended in air is elucidated. While WS2 on a SiO2 substrate begins oxidation within weeks, epitaxially grown WS2 on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS2 on a SiO2 substrate by a local electric field created using an atomic force microscope tip is also demonstrated.

Original languageEnglish
Article number1603898
JournalAdvanced Materials
Volume29
Issue number18
DOIs
StatePublished - 10 May 2017

Keywords

  • WS/graphene heterostructures
  • antioxidation of WS monolayers
  • epitaxial growth
  • surface electric field

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