TY - JOUR
T1 - High-efficiency silicon THz modulator using optically injected carriers
AU - Chen, I. Chun Anderson
AU - Park, Seong Wook
AU - Karaalioglu, Canan
AU - Martini, Rainer
AU - Meshal, Azza
PY - 2007
Y1 - 2007
N2 - A highly efficient and simply realizable method for broadband THz transmission modulation is demonstrated for pulsed THz TDS system using an optically switched B-doped silicon modulator. With 45 mW of absorbed 800 nm CW light, a maximum of 20.5 dB THz attenuation was achieved, with the technically important 3 dB loss reached at only 5 mW. These results show good agreement with the Drude-Lorentz model, whereby allowing the extraction of optically injected carrier damping rates, depicting a linear dependency of collision frequency on optically excited carrier density.
AB - A highly efficient and simply realizable method for broadband THz transmission modulation is demonstrated for pulsed THz TDS system using an optically switched B-doped silicon modulator. With 45 mW of absorbed 800 nm CW light, a maximum of 20.5 dB THz attenuation was achieved, with the technically important 3 dB loss reached at only 5 mW. These results show good agreement with the Drude-Lorentz model, whereby allowing the extraction of optically injected carrier damping rates, depicting a linear dependency of collision frequency on optically excited carrier density.
KW - CW
KW - Carriers
KW - Drude-Lorentz
KW - Modulator
KW - Optical
KW - Silicon
KW - THz
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U2 - 10.1166/jno.2007.009
DO - 10.1166/jno.2007.009
M3 - Article
AN - SCOPUS:48249143726
SN - 1555-130X
VL - 2
SP - 96
EP - 100
JO - Journal of Nanoelectronics and Optoelectronics
JF - Journal of Nanoelectronics and Optoelectronics
IS - 1
ER -