High-spatial-resolution analysis of Ge layers in Si

M. Libera, D. A. Smith, L. Tsung, D. Eaglesham

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

This paper describes the results of preliminary experiments to characterize the focused-probe properties of a new 200 kV field-emission TEM/STEM. Probe currents are measured using a Faraday stage. Probe size is measured by high-angle annular-dark-field STEM line scans across a Ge monolayer embedded coherently in single-crystal silicon. These measurements show the the instrument is capable of producing probes with a full-width at half-maximum of order 3nm and less with at least a few tenths of a nanoampere of current. This is sufficient to execute X-ray microanalysis measurements with good signal-to-noise at nanometer lengths scales. As part of the same set of experiments, this work shows experimentally that the HAADF scattering from pure amorphous silicon is stronger than that from pure crystalline silicon, possibly due to the increased Debye-Waller factor and the absence of chanelling effects in the amorphous structure.

Original languageEnglish
Pages (from-to)564-569
Number of pages6
JournalUltramicroscopy
Volume52
Issue number3-4
DOIs
StatePublished - Dec 1993

Fingerprint

Dive into the research topics of 'High-spatial-resolution analysis of Ge layers in Si'. Together they form a unique fingerprint.

Cite this