TY - JOUR
T1 - Highly efficient THz modulation using optically excited silicon
AU - Karaalioglu, Canan
AU - Chen, I. Chun Anderson
AU - Brucherseifer, Martin
AU - Meshal, Azza
AU - Martini, Rainer
PY - 2005
Y1 - 2005
N2 - Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.
AB - Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.
KW - Modulation
KW - Optically excited semiconductors
KW - THz attenuation
KW - THz-TDS
UR - http://www.scopus.com/inward/record.url?scp=26844560506&partnerID=8YFLogxK
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U2 - 10.1117/12.604897
DO - 10.1117/12.604897
M3 - Conference article
AN - SCOPUS:26844560506
SN - 0277-786X
VL - 5790
SP - 263
EP - 270
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
M1 - 30
T2 - Terahertz for Military and Security Applications III
Y2 - 28 March 2005 through 29 March 2005
ER -