Highly efficient THz modulation using optically excited silicon

Canan Karaalioglu; I. Chun Anderson Chen; Martin Brucherseifer; Azza Meshal; Rainer Martini

doi:10.1117/12.604897

Highly efficient THz modulation using optically excited silicon

Canan Karaalioglu
, I. Chun Anderson Chen
, Martin Brucherseifer
, Azza Meshal
, Rainer Martini

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

Original language	English
Article number	30
Pages (from-to)	263-270
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5790
DOIs	https://doi.org/10.1117/12.604897
State	Published - 2005
Event	Terahertz for Military and Security Applications III - Orlando, FL, United States Duration: 28 Mar 2005 → 29 Mar 2005

Keywords

Modulation
Optically excited semiconductors
THz attenuation
THz-TDS

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10.1117/12.604897

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@article{5b30d739477243b98a8ec5024a0bf594,

title = "Highly efficient THz modulation using optically excited silicon",

abstract = "Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99\% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.",

keywords = "Modulation, Optically excited semiconductors, THz attenuation, THz-TDS",

author = "Canan Karaalioglu and Chen, \{I. Chun Anderson\} and Martin Brucherseifer and Azza Meshal and Rainer Martini",

year = "2005",

doi = "10.1117/12.604897",

language = "English",

volume = "5790",

pages = "263--270",

note = "Terahertz for Military and Security Applications III ; Conference date: 28-03-2005 Through 29-03-2005",

}

TY - JOUR

T1 - Highly efficient THz modulation using optically excited silicon

AU - Karaalioglu, Canan

AU - Chen, I. Chun Anderson

AU - Brucherseifer, Martin

AU - Meshal, Azza

AU - Martini, Rainer

PY - 2005

Y1 - 2005

N2 - Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

AB - Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

KW - Modulation

KW - Optically excited semiconductors

KW - THz attenuation

KW - THz-TDS

UR - https://www.scopus.com/pages/publications/26844560506

UR - https://www.scopus.com/pages/publications/26844560506#tab=citedBy

U2 - 10.1117/12.604897

DO - 10.1117/12.604897

M3 - Conference article

AN - SCOPUS:26844560506

SN - 0277-786X

VL - 5790

SP - 263

EP - 270

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 30

T2 - Terahertz for Military and Security Applications III

Y2 - 28 March 2005 through 29 March 2005

ER -

Highly efficient THz modulation using optically excited silicon

Abstract

Keywords

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