Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
- Gwan Hyoung Lee
- , Xu Cui
- , Young Duck Kim
- , Ghidewon Arefe
- , Xian Zhang
- , Chul Ho Lee
- , Fan Ye
- , Kenji Watanabe
- , Takashi Taniguchi
- , Philip Kim
- , James Hone
Research output: Contribution to journal › Article › peer-review
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