Isotopic Studies of Oxidation of Si3N4 and Si using SIMS

Honghua Du; Cheryl A. Houser; Richard E. Tressler; Karl E. Spear; Carlo G. Pantano

doi:10.1149/1.2086543

Isotopic Studies of Oxidation of Si₃N₄ and Si using SIMS

Honghua Du, Cheryl A. Houser, Richard E. Tressler, Karl E. Spear, Carlo G. Pantano

Pennsylvania State University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Original language	English
Pages (from-to)	741-742
Number of pages	2
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	2
DOIs	https://doi.org/10.1149/1.2086543
State	Published - Feb 1990

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title = "Isotopic Studies of Oxidation of Si3N4 and Si using SIMS",

author = "Honghua Du and Houser, \{Cheryl A.\} and Tressler, \{Richard E.\} and Spear, \{Karl E.\} and Pantano, \{Carlo G.\}",

year = "1990",

month = feb,

doi = "10.1149/1.2086543",

language = "English",

volume = "137",

pages = "741--742",

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AU - Du, Honghua

AU - Houser, Cheryl A.

AU - Tressler, Richard E.

AU - Spear, Karl E.

AU - Pantano, Carlo G.

PY - 1990/2

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DO - 10.1149/1.2086543

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AN - SCOPUS:0025383921

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VL - 137

SP - 741

EP - 742

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Isotopic Studies of Oxidation of Si3N4 and Si using SIMS

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Isotopic Studies of Oxidation of Si₃N₄ and Si using SIMS