Kinetic Analysis of Chemical Vapor Deposition of Boron Nitride

Woo Y. Lee, W. J. Lackey, Pradeep K. Agrawal

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

BN was deposited on Al2O3 substrates from the BCl3─NH3─Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800° to 1000°C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first‐order dependency on BCl3 concentration. The BN deposition rate increased with temperature, pressure, and BCl3 concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters.

Original languageEnglish
Pages (from-to)2642-2648
Number of pages7
JournalJournal of the American Ceramic Society
Volume74
Issue number10
DOIs
StatePublished - Oct 1991

Keywords

  • boron nitride
  • chemical vapor deposition
  • kinetics
  • microscopy
  • models

Fingerprint

Dive into the research topics of 'Kinetic Analysis of Chemical Vapor Deposition of Boron Nitride'. Together they form a unique fingerprint.

Cite this