TY - JOUR
T1 - Kinetic Analysis of Chemical Vapor Deposition of Boron Nitride
AU - Lee, Woo Y.
AU - Lackey, W. J.
AU - Agrawal, Pradeep K.
PY - 1991/10
Y1 - 1991/10
N2 - BN was deposited on Al2O3 substrates from the BCl3─NH3─Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800° to 1000°C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first‐order dependency on BCl3 concentration. The BN deposition rate increased with temperature, pressure, and BCl3 concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters.
AB - BN was deposited on Al2O3 substrates from the BCl3─NH3─Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800° to 1000°C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first‐order dependency on BCl3 concentration. The BN deposition rate increased with temperature, pressure, and BCl3 concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters.
KW - boron nitride
KW - chemical vapor deposition
KW - kinetics
KW - microscopy
KW - models
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U2 - 10.1111/j.1151-2916.1991.tb06813.x
DO - 10.1111/j.1151-2916.1991.tb06813.x
M3 - Article
AN - SCOPUS:84975331445
SN - 0002-7820
VL - 74
SP - 2642
EP - 2648
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 10
ER -