Kinetic Analysis of Chemical Vapor Deposition of Boron Nitride

BN was deposited on Al₂O₃ substrates from the BCl₃─NH₃─Ar reagent system. An impinging jet reactor configuration was used to obtain kinetic data in the temperature range of 800° to 1000°C and in the pressure range of 4 to 20 kPa. The BN deposition could be described by a simple kinetic rate expression with an activation energy of about 39 kcal/mol and a first‐order dependency on BCl₃ concentration. The BN deposition rate increased with temperature, pressure, and BCl₃ concentration. The microstructure of the BN coatings was not strongly influenced by the process parameters.