TY - JOUR
T1 - Location-specific growth and transfer of arrayed MoS2 monolayers with controllable size
AU - Wang, Xiaotian
AU - Kang, Kyungnam
AU - Chen, Siwei
AU - Du, Ruozhou
AU - Yang, Eui Hyeok
N1 - Publisher Copyright:
© 2017 IOP Publishing Ltd.
PY - 2017/6
Y1 - 2017/6
N2 - We present a controlled chemical vapor deposition (CVD) growth and transfer of arrayed MoS2 monolayers on predetermined locations. The patterned transition metal oxide (e.g. MoO3) source substrate was contacted face-to-face with an SiO2 growth substrate, where localized MoS2 flakes were synthesized on both source and growth substrates, following a CVD procedure. This growth technique enabled the growth of both single crystalline and polycrystalline MoS2 monolayer arrays with controlled size and location, exclusively on predetermined locations on the growth substrates. As-grown MoS2 arrays were transferred using a unique process that combines the wet and stamping transfer processes and dramatically enhanced the integrity of transferred MoS2 on microstructures, while protecting the microstructures during the transfer process. This fabrication technique can be applied to different transition metal dichalcogenides (TMDs) and allows the formation of TMDs on select locations, potentially eliminating a post-lithography step for device fabrication.
AB - We present a controlled chemical vapor deposition (CVD) growth and transfer of arrayed MoS2 monolayers on predetermined locations. The patterned transition metal oxide (e.g. MoO3) source substrate was contacted face-to-face with an SiO2 growth substrate, where localized MoS2 flakes were synthesized on both source and growth substrates, following a CVD procedure. This growth technique enabled the growth of both single crystalline and polycrystalline MoS2 monolayer arrays with controlled size and location, exclusively on predetermined locations on the growth substrates. As-grown MoS2 arrays were transferred using a unique process that combines the wet and stamping transfer processes and dramatically enhanced the integrity of transferred MoS2 on microstructures, while protecting the microstructures during the transfer process. This fabrication technique can be applied to different transition metal dichalcogenides (TMDs) and allows the formation of TMDs on select locations, potentially eliminating a post-lithography step for device fabrication.
KW - Aligned transfer
KW - Chemical vapor deposition
KW - Location-specific growth
KW - Molybdenum disulfide
KW - Transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85021363230&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021363230&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/aa6e69
DO - 10.1088/2053-1583/aa6e69
M3 - Article
AN - SCOPUS:85021363230
VL - 4
JO - 2D Materials
JF - 2D Materials
IS - 2
M1 - 025093
ER -