TY - JOUR
T1 - Logic-I/O Threshold Comparing γ-Dosimeter in Radiation Insensitive Deep-Sub-Micron CMOS
AU - Tang, Adrian
AU - Kim, Yangyho
AU - Chang, Mau Chung Frank
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/4
Y1 - 2016/4
N2 - This paper discusses challenges of implementing embedded dosimeters into larger CMOS systems-on-chip (SoCs) in deep-scaled CMOS technologies (with gate lengths smaller than 90 nm) where the high level of intrinsic radiation hardness and limited availability of floating gate structures prohibit realizing a highly sensitive radfet-type dosimeter. We therefore propose a novel Logic-I/O Threshold Comparison Dosimeter, which offers compatibility with advanced CMOS technology nodes and co-integration with other circuitry. The proposed dosimeter estimates dose level by directly comparing threshold voltages between I/O and logic devices. Furthermore, through carefully sizing the logic and I/O devices and designing the vital comparator circuitry, we can also achieve required temperature independence for deep-space applications. A prototype is then fabricated in 65-nm CMOS, and measured up to 75 Mrad(Si) of total ionized dose at a Cobalt 60 (γ) facility.
AB - This paper discusses challenges of implementing embedded dosimeters into larger CMOS systems-on-chip (SoCs) in deep-scaled CMOS technologies (with gate lengths smaller than 90 nm) where the high level of intrinsic radiation hardness and limited availability of floating gate structures prohibit realizing a highly sensitive radfet-type dosimeter. We therefore propose a novel Logic-I/O Threshold Comparison Dosimeter, which offers compatibility with advanced CMOS technology nodes and co-integration with other circuitry. The proposed dosimeter estimates dose level by directly comparing threshold voltages between I/O and logic devices. Furthermore, through carefully sizing the logic and I/O devices and designing the vital comparator circuitry, we can also achieve required temperature independence for deep-space applications. A prototype is then fabricated in 65-nm CMOS, and measured up to 75 Mrad(Si) of total ionized dose at a Cobalt 60 (γ) facility.
KW - Advanced CMOS
KW - CMOS dosimeter
KW - deep-submicron technology
UR - http://www.scopus.com/inward/record.url?scp=84964211296&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964211296&partnerID=8YFLogxK
U2 - 10.1109/TNS.2016.2528219
DO - 10.1109/TNS.2016.2528219
M3 - Article
AN - SCOPUS:84964211296
SN - 0018-9499
VL - 63
SP - 1247
EP - 1250
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 2
M1 - 7454832
ER -