TY - JOUR
T1 - Low‐Pressure Chemical Vapor Deposition of α‐Si3N4 from SiF4 and NH3
T2 - Kinetic Characteristics
AU - Lee, Woo Y.
AU - Strife, James R.
AU - Veltri, Richard D.
PY - 1992/8
Y1 - 1992/8
N2 - Deposition of α‐Si3N4 from SiF4 and NH3 was systematically studied using an axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by temperature. In general, deposition rate increased exponentially with increased deposition temperature, although reagent depletion in the axial direction caused a rapid decrease in the deposition rate. The deposition rate increased moderately with increased flow rate or decreased NH3/SiF4 molar ratio. The decomposition characteristic of pure NH3 and SiF4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions in order to assess their influences on the Si3N4 deposition process. Finally, the crystallography of Si3N4 deposits was correlated as a function of temperature and deposition rate.
AB - Deposition of α‐Si3N4 from SiF4 and NH3 was systematically studied using an axisymmetric, vertical hot‐wall reactor in the temperature range of 1340° to 1490°C. The relationship between process variables and deposition behavior was identified. The deposition process was most strongly influenced by temperature. In general, deposition rate increased exponentially with increased deposition temperature, although reagent depletion in the axial direction caused a rapid decrease in the deposition rate. The deposition rate increased moderately with increased flow rate or decreased NH3/SiF4 molar ratio. The decomposition characteristic of pure NH3 and SiF4 were studied utilizing mass spectroscopy and compared to thermodynamic predictions in order to assess their influences on the Si3N4 deposition process. Finally, the crystallography of Si3N4 deposits was correlated as a function of temperature and deposition rate.
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U2 - 10.1111/j.1151-2916.1992.tb04484.x
DO - 10.1111/j.1151-2916.1992.tb04484.x
M3 - Article
AN - SCOPUS:84986366696
SN - 0002-7820
VL - 75
SP - 2200
EP - 2206
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 8
ER -