TY - JOUR
T1 - Low‐Temperature Metal‐Organic Chemical Vapor Deposition of Silicon Nitride
AU - Du, Honghua
AU - Gallois, Bernard
AU - Gonsalves, Kenneth E.
PY - 1990/3
Y1 - 1990/3
N2 - Amorphous silicon nitride films have been deposited on single‐crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si‐C, Si‐H, and C‐H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.
AB - Amorphous silicon nitride films have been deposited on single‐crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si‐C, Si‐H, and C‐H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.
KW - ammonia
KW - bonding
KW - chemical vapor deposition
KW - films
KW - silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=0025404512&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025404512&partnerID=8YFLogxK
U2 - 10.1111/j.1151-2916.1990.tb06590.x
DO - 10.1111/j.1151-2916.1990.tb06590.x
M3 - Article
AN - SCOPUS:0025404512
SN - 0002-7820
VL - 73
SP - 764
EP - 766
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 3
ER -