Low‐Temperature Metal‐Organic Chemical Vapor Deposition of Silicon Nitride

Honghua Du, Bernard Gallois, Kenneth E. Gonsalves

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Amorphous silicon nitride films have been deposited on single‐crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si‐C, Si‐H, and C‐H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.

Original languageEnglish
Pages (from-to)764-766
Number of pages3
JournalJournal of the American Ceramic Society
Volume73
Issue number3
DOIs
StatePublished - Mar 1990

Keywords

  • ammonia
  • bonding
  • chemical vapor deposition
  • films
  • silicon nitride

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