Abstract
Amorphous silicon nitride films have been deposited on single‐crystal silicon from the gas mixture of methylsilazane and ammonia at 873 to 1073 K. The films have been characterized by ellipsometry, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. The Si‐C, Si‐H, and C‐H bonds in methylsilazane can be effectively cleaved and the associated C and H species removed. The structure and composition of the films do not show any apparent dependence on the deposition temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 764-766 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 73 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 1990 |
Keywords
- ammonia
- bonding
- chemical vapor deposition
- films
- silicon nitride
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