Micro-capacitors based on electrochemically grown vertical arrays of gold nanowires as electrodes

D. S. Choi, Jung Rae Park, S. Lee, T. Hahn, N. Presser, M. S. Leung, G. W. Stupian, Eui Hyeok Yang, Fahad Khalid

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper describes the development of micro-capacitors with electrodes based on electrochemically grown vertical gold nanowire arrays. A high aspect-ratio anodized aluminum oxide template integrated on silicon dioxide/silicon substrates was exploited for fabricating a vertical array of nanowires with a high surface to volume ratio. Bismuth ferric oxide thin films were deposited to create high dielectric material between the electrodes using room temperature electrodeposition. This nanofabrication process may be compatible with a complementary metal-oxide-semiconductor (CMOS) process, therefore, this capacitor can be used for protecting and regulating the surge voltage biased to the CMOS circuits. This capacitor achieved a high density capacitance of 3.1 μF/m2 at 1 MHz, which was measured using a parallel plate set-up.

Original languageEnglish
Pages (from-to)5007-5009
Number of pages3
JournalThin Solid Films
Volume518
Issue number17
DOIs
StatePublished - 30 Jun 2010

Keywords

  • Dielectric material
  • Micro capacitor
  • Nanowires

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